MBR340

Recovery Time :
Maximum Power Dissipation :
Mounting Style : Through Hole
Configuration : Single
Product : Schottky Diodes
Forward Continuous Current : 3 A
Max Surge Current : 80 A
Peak Reverse Voltage : 40 V
Operating Temperature Range : - 65 C to + 175 C
Packaging : Bulk
Package / Case : DO-201AD
Maximum Reverse Leakage Current : 600 uA
Forward Voltage Drop : 0.85 V at 9.4 A


Features:

• Extremely Low vF
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Low Stored Charge, Majority Carrier Conduction




Specifications

Rating	Symbol	MBR3200	MBR33	MBR340	MBR350	MBR360	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	VRRM VRWM VR	20	30	40	50	60	V
Average Rectified Forward Current, TA = 65°C (RJA = 28°C/W, P.C. Board Mounting, see Note 3)	IO	3.0					A
NonRepetitive Peak Surge Current (2) (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C)	IFSM	80					A
Operating and Storage Junction Temperature Range (Reverse Voltage applied)	TJ, Tstg	-65 to 150°C					°C
Peak Operating Junction Temperature (Forward Current applied)	TJ(pk)	150					°C

Parameters:

Technical/Catalog Information	MBR340
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	40V
Current - Average Rectified (Io)	3A
Voltage - Forward (Vf) (Max) @ If	600mV @ 3A
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	600A @ 40V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Axial
Package / Case	DO-201AD, Axial
Packaging	Bulk
Capacitance @ Vr, F	-
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MBR340 MBR340 MBR340OS ND MBR340OSND MBR340OS