MBRA120LT3

Series: -
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Package / Case: DO-214AC, SMA
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Reverse Leakage @ Vr: 200µA @ 20V
Supplier Device Package: SMA
Manufacturer: ON Semiconductor
Voltage - Forward (Vf) (Max) @ If: 395mV @ 1A


Features:

• Compact Package with JBend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for OverVoltage Protection
• Optimized for Low Leakage Current


Specifications

Rating	Symbol	Value	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	VRRM VRWM VR	20	V
Average Rectified Forward Current (At Rated VR, TL = 110)	IO	1.0	A
NonRepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)	IFSM	40	A
Storage/Operating Case Temperature Operating Junction Temperature	Tstg, TC TJ	55 to +125
Voltage Rate of Change (Rated VR, TJ = 25)	dv/dt	10,000	V/s

Description

employing the MBRA120LT3 Schottky Barrier principle in a metaltosilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.