Purchase MBRB2535CTL, In-stock MBRB2535CTL From SeekIC.
MFG:ON D/C:06+
Part Number: MBRB2535CTL
MFG: ON
D/C: 06+
Description: The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metaltosilicon ...
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MBRB2535CTL
-
Suppliers
DataSheet
General Description
MBRB2535CTL General Description
The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. These stateoftheart devices have the following features:
• CenterTap Configuration
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL94, VO at 1/8,
• Guaranteed Reverse Avalanche
• Short Heat Sink Tab Manufactured - Not Sheared!
• Similar in Size to the Industry Standard TO220 Package
MBRB2535CTL Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
|
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
35 |
Volts |
|
Average Rectified Forward Current Per Leg (At Rated VR) TC = +100°C Per Device |
IF(AV) |
12.5 |
Amps |
|
Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz) TC = +100°C |
IFRM |
25 |
Amps |
|
Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) |
IFSM |
150 |
Amps |
|
Peak Repetitive Reverse Surge Current (2 s, 1 kHz) |
IRRM |
1.0 |
Amp |
|
Storage Temperature |
Tstg |
55 to +150 |
°C |
|
Operating Junction Temperature |
TJ |
55 to +125 |
°C |
|
Voltage Rate of Change (Rated VR) |
dv/dt |
10000 |
V/s |
MBRB2535CTL
PDF/DataSheet Download
- Datasheet: MBRB2535CTL
- File Size: 108201 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
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