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Part Number: MBRB25HxxCT

 

 

 

 

 

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MBRB25HxxCT Maximum Ratings

Parameter
Symbol
MBR25H35CT
MBR25H45CT
MBR25H50CT
MBR25H60CT
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V

Max.average forward rectified current Total device

(see fig. 1) Per leg

I F(AV)

30

15

A
Peak repetitive forward current at TC = 150°C
(rated VR, 20KHz sq. wave)
IFRM
30
A
Non-repetitive avalanche energy per leg
at 25°C, IAS = 4A, L = 10mH
EAS
80
mJ
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) per leg
IFSM
150
A
Peak repetitive reverse surge current per leg
at tp = 2.0s, 1KHZ
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy (8/20s waveform)
ERSM
25
20
mJ

Electrostatic discharge capacitor voltage

Human body model: C = 100pF, R = 1.5k

VC
25
kV
Voltage rate of change (rated VR)
dv/dt
10,000
V/s
Operating junction temperature range
TJ
65 to +175
°C
Storage temperature range
TSTG
65 to +175
°C
RMS Isolation voltage (MBRF type only) from terminals
4500 (1)
to heatsink with t = 1.0 second, RH 30%
VISOL
4500 (1)
3500 (2)
1500 (3)
V

Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset (3) Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19") (2) Clip mounting (on case), where leads do overlap heatsink

MBRB25HxxCT Features

• Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature

MBRB25HxxCT datasheet

MBR 1635
PDF/DataSheet Download

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