MC-4516CB647XF-A75

The MC-4516CB647XF-A75 is 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: PD45128841 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.

Features of the MC-4516CB647XF-A75 are:(1)16,777,216 words by 72 bits organization (ECC Type);(2)clock frequency and access time from CLK;(3)fully synchronous dynamic RAM, with all signals referenced to a positive clock edge;(4)pulsed interface;(5)possible to assert random column address in every cycle;(6)quad internal banks controlled by BA0 and BA1 (Bank Select);(7)programmable burst-length (1, 2, 4, 8 and full page);(8)programmable wrap sequence (sequential / interleave);(9)programmable /CAS latency (2, 3);(10)automatic precharge and controlled precharge;(11)CBR (Auto) refresh and self refresh;(12)all DQs have 10 ±10 % of series resistor;(13)single 3.3V ± 0.3 V power supply;(14)LVTTL compatible;(15)4,096 refresh cycles/64 ms;(16)burst termination by burst stop command and precharge command;(17)168-pin dual in-line memory module (Pin pitch = 1.27 mm);(18)unbuffered type;(19)serial PD.

The absolute maximum ratings of the  MC-MC-4516CB647XF-A75 can be summarized as:(1):the parameter is voltage on power supply pin relative to GND,the symbol is VCC,the value is -0.5 to +4.6,the unit is V;(2):the parameter is voltage on input pin relative to GND,the symbol is VT,the value is -0.5 to +4.6,the unit is V;(3):the parameter is short circuit output current,the symbol is IO,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 8,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +70,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +125,the unit is .