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Part Number: MC-4532CD646
Description: The MC-4532CD646 is a 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: mPD4...
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MC-4532CD646
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General Description
MC-4532CD646 General Description
The MC-4532CD646 is a 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: mPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
MC-4532CD646 Maximum Ratings
| Parameter | Symbol | Condition | Rating | Unit |
| Voltage on power supply pin relative to GND | VCC | 0.5 to +4.6 | V | |
| Voltage on input pin relative to GND | VT | 0.5 to +4.6 | V | |
| Short circuit output current | IO | 50 | mA | |
| Power dissipation | PD | 16 | W | |
| Operating ambient temperature | TA | 0 to +70 | ||
| Storage temperature | Tstg | 55 to +125 |
MC-4532CD646 Features
· 33,554,432 words by 64 bits organization
· Clock frequency and access time from CLK
· Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
· Pulsed interface
· Possible to assert random column address in every cycle
· Quad internal banks controlled by BA0 and BA1 (Bank Select)
· Programmable burst-length (1, 2, 4, 8 and full page)
· Programmable wrap sequence (Sequential / Interleave)
· Programmable /CAS latency (2, 3)
· Automatic precharge and controlled precharge
· CBR (Auto) refresh and self refresh
· All DQs have 10 W ±10 % of series resistor
· Single 3.3 V ± 0.3 V power supply
· LVTTL compatible
· 4,096 refresh cycles/64 ms
· Burst termination by Burst Stop command and Precharge command
· 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
· Unbuffered type
· Serial PD
· Clock frequency and access time from CLK
· Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
· Pulsed interface
· Possible to assert random column address in every cycle
· Quad internal banks controlled by BA0 and BA1 (Bank Select)
· Programmable burst-length (1, 2, 4, 8 and full page)
· Programmable wrap sequence (Sequential / Interleave)
· Programmable /CAS latency (2, 3)
· Automatic precharge and controlled precharge
· CBR (Auto) refresh and self refresh
· All DQs have 10 W ±10 % of series resistor
· Single 3.3 V ± 0.3 V power supply
· LVTTL compatible
· 4,096 refresh cycles/64 ms
· Burst termination by Burst Stop command and Precharge command
· 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
· Unbuffered type
· Serial PD
MC-4532CD646
PDF/DataSheet Download
- Datasheet: MC-4532CD646
- File Size: 151969 KB
- Manufacturer: NEC [NEC]
- Click here to Download
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