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Part Number: MC-458CB647

 

 

 

 

Description: The MC-458CB647EFA and MC-458CB647PFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces o...


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MC-458CB647 General Description


The MC-458CB647EFA and MC-458CB647PFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM : µPD45128163 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

MC-458CB647 Maximum Ratings

Parameter Symbol Condition Rating Unit
Voltage on power supply pin relative to GND VCC   0.5 to +4.6 V
Voltage on input pin relative to GND VT   0.5 to +4.6 V
Short circuit output current IO   50 mA
Power dissipation PD   4 W
Operating ambient temperature TA   0 to 70 °C
Storage temperature Tstg   55 to +125 °C
 

MC-458CB647 Features

• 8,388,608 words by 64 bits organization
• Clock frequency and access time from CLK
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and full page)
• Programmable wrap sequence (sequential / interleave)
• Programmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ± 10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles /64 ms
• Burst termination by Burst Stop command and Precharge command
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
• Unbuffered type
• Serial PD

MC-458CB647 Connection Diagram

MC-458CB647  Connection Diagram

MC-458CB647 datasheet

MC-458CB647
PDF/DataSheet Download

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