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Part Number: MC-4R64CPE6C
Description: The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable f...


Description: The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable f...
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.
MC-4R64CPE6C modules consists of four 128M Direct Rambus DRAM (Direct RDRAM™) devices (mPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture o f the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous ransactions per device.
| Symbol | Parameter | MIN. | MAX. | Unit |
| VI,ABS | Voltage applied to any RSL or CMOS signal pad with respect to GND | -0.3 | VDD + 0.3 | V |
| VDD,ABS | Voltage on VDD with respect to GND | -5.0 | VDD + 1.0 | V |
| TSTORE | Storage temperature | -50 | +100 | °C |
MC-4R64CPE6C
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