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Part Number: MC74VHC1G50

 

 

 

 

Description: The MC74VHC1G50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. It achieves high sp...


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MC74VHC1G50 General Description


The MC74VHC1G50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

The internal circuit is composed of three stages, including a buffered output which provides high noise immunity and stable output.

MC74VHC1G50 Maximum Ratings

Characteristics Symbol Value Unit
DC Supply Voltage VCC 0.5 to +7.0 V
DC Input Voltage VIN 0.5 to VCC +0.5 V
DC Output Voltage VCC = 0
High or Low State


 VOUT

0.5 to 7.0

0.5 to VCC + 0.5

 V
Digital Input Diode Current IIK 20 mA
DC Supply Current, VCC and GND ICC +25 mA
Power dissipation in still air, SC88A † PD 200 mW
Lead temperature, 1 mm from case for 10 s TL 260 °C
Storage temperature Tstg 65 to +150 °C
Output Diode Current (VOUT < GND; VOUT > VCC) IOK +20 mA
DC Output Current, per Pin IOUT +25 mA

MC74VHC1G50 Features

• High Speed: tPD = 3.5ns (Typ) at VCC = 5V
• Low Power Dissipation: ICC = 2mA (Max) at TA = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Latchup Performance Exceeds 300mA
• ESD Performance: HBM > 1500V; MM > 200V

MC74VHC1G50 Connection Diagram

MC74VHC1G50 Connection Diagram

MC74VHC1G50 datasheet

MC74VHC1G50
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