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Part Number: MC74VHC1GT125

 

MFG: N/A

Package Cooled: N/A

D/C: 09+

Description: The MC74VHC1GT125 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. I...


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MC74VHC1GT125 General Description


The MC74VHC1GT125 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

The MC74VHC1GT125 requires the 3−state control input (OE) to be set High to place the output into the high impedance state.

The device input is compatible with TTL−type input thresholds and the output has a full 5 V CMOS level output swing. The input protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic−level translator from 3.0 V CMOS logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic to 3.0 V CMOS Logic while operating at the high−voltage power supply.

The MC74VHC1GT125 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1GT125 to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when VCC = 0 V. These input and output structures help prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc.
• High Speed: tPD = 3.5 ns (Typ) at VCC = 5 V
• Low Power Dissipation: ICC = 1 A (Max) at TA = 25°C
• TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
• CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load
• Power Down Protection Provided on Inputs and Outputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16

MC74VHC1GT125 Maximum Ratings

Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
−0.5 to +7.0
V
VIN
DC Input Voltage
−0.5 to +7.0
V
VOUT
DC Output Voltage VCC = 0
High or Low State
−0.5 to 7.0
−0.5 to VCC + 0.5
V
IIK
Input Diode Current
−20
mA
IOK
Output Diode Current VOUT < GND; VOUT > VCC
+20
mA
IOUT
DC Output Current, per Pin
+25
mA
ICC
DC Supply Current, VCC and GND
+50
mA
PD
Power Dissipation in Still Air SC−88A, TSOP−5
200
mw
JA
Thermal Resistance SC−88A, TSOP−5
333
°C/W
TL
Lead Temperature, 1 mm from Case for 10 s
260
°C
TJ
Junction Temperature Under Bias
+150
°C
Tstg
Storage Temperature
−65 to +150
°C
VESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
ILatch−Up
Latch−Up Performance Above VCC and Below GND at 125°C (Note 5)
±500
mA

1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute−maximum−rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22−A114−A
3. Tested to EIA/JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA/JESD78

MC74VHC1GT125 Connection Diagram

MC74VHC1GT125  Connection Diagram

MC74VHC1GT125 datasheet

MC74VHC1GT125
PDF/DataSheet Download

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