Features: ·Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitatiing high-density mounting.·The MCH6702 consists of two chips which are equivaient to the MCH6101 and SBS006, respectively.·The ultrasmall package facilitates miniaturization in end produ...
MCH6702: Features: ·Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitatiing high-density mounting.·The MCH6702 consists of two chips which are equivaient to t...
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| Parameter | Symbol | Conditions | Ratings | Unit |
| [TR] | ||||
| Collector-to-Base Voltage | VCBO | -15 | V | |
| Collector-to-Emitter Voltage | VCEO | -15 | V | |
| Emitter-to-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -1.5 | A | |
| Collector Current (Pulse) | ICP | -3 | A | |
| Base Current | IB | -300 | mA | |
| Collector Dissipation | PC | Mounted on a ceramic board(600mm250.8mm) | 1.0 |
W |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55 to +125 | ||
| [SBD] | ||||
| Repetitive Peak Reverse Voltage | VRRM | 30 | V | |
| Non-repetitive Peak Reverse Surge Voltage | VRSM | 30 |
V | |
| Average Output Current | IO | 0.7 | A | |
| Surge Current | IFSM | 50Hz sine wave, 1 cycle | 10 | A |
| Junction Temperature | Tj | -55 to +125 | ||
| Storage Temperature | Tstg | -55 to +125 | ||