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MCR100

Features: • Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits• Blocking Voltage to 600 V• On−State Current Rating of 0.8 Amperes RMS at 80°C• High Surge Current Capability − 10 A• Minimum and Maximum Values of IGT, VGT and IH Sp...

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MCR100: Features: • Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits• Blocking Voltage to 600 V• On−State Current Rating of 0.8 Amperes RMS at 80°C•...

MCR100 Data Sheet

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Part Number:
MCR100
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

• Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits
• Blocking Voltage to 600 V
• On−State Current Rating of 0.8 Amperes RMS at 80°C
• High Surge Current Capability − 10 A
• Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
• Immunity to dV/dt − 20 V/sec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Pb−Free Packages are Available*


Specifications

Parameter
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = 40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open)
MCR100−3
MCR100−4
MCR100−6
MCR100−8
VDRM
VRRM
100
200
400
600
Volts
On-State RMS Current, (TC = 80°C) 180° Conduction Angles
IT(RMS)
0.8
A
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C)
ITSM
10
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
0.415
A2sec
Peak Gate Power (Pulse Width 1.0 s, TC = 80°C)
PGM
0.1
Watts
Average Gate Power (t = 8.3 ms, TC = 80°C)
PG(AV)
0.10
Watts
Peak Gate Current (Pulse Width 3 1.0 ms, TC = 80°C)
IGM
1.0
A
           Reverse Peak Gate Voltage, (TA = 25°C, Pulse
                                         Width 1.0 s)		        VGRM          5.0          V
Operating Junction Temperature Range @ Rate VRRM and VDRM
TJ
40 to +110
°C
Storage Temperature Range
Tstg
40 to +150
°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.




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