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Part Number: MCR225FP

 

 

 

 

 

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MCR225FP Maximum Ratings

Parameter
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 40 to +125°C, Gate Open)
MCR225-2FP
MCR225-4FP
MCR225-6FP
MCR225-8FP
MCR225-10FP
VDRM
VRRM
50
200
400
600
800
Volts
On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)
IT(RMS)
25
A
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)Preceded and followed by rated current
ITSM
300
A
Circuit Fusing (t = 8.3 ms)
I2t
375
A2sec
Peak Gate Power (TC = +70°C, Pulse Width = 10 ms)
PGM
20
Watts
Average Gate Power (TC = +70°C, t = 8.3 ms)
PG(AV)
0.5
Watts
Peak Gate Current (TC = +70°C, Pulse Width = 10 s)
IGM
2.0
A
 RMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)       V(ISO)        1500       Volts
Operating Junction Temperature Range
TJ
40 to +125
°C
Storage Temperature Range
Tstg
40 to +125
°C

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

MCR225FP Features

• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Insulated Package Simplifies Mounting

MCR225FP datasheet

MCR225FP
PDF/DataSheet Download

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