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Part Number: MCR25D

 

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MCR25D Maximum Ratings

Parameter
Symbol
Value
Unit
Peak Repetitive OffState Voltage(1)
(TJ = 40 to 125°C, Sine Wave, 50 to
60 Hz, Gate Open) MCR25D
MCR25M
MCR25N
VDRM
VRRM
400
600
800
Volts
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
ITM
25
Amps
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
IT(RMS)
300
Amps
Circuit Fusing Consideration
(t = 8.3 ms)
I2t
373
Amps
Forward Peak Gate Power
(Pulse Width 3 1.0 ms, TC = 80°C)
PGM
20
Amps
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
A2s
Forward Peak Gate Current
(t 1.0 s, TC = 85°C)
IGM
2.0
Amps
Operating Junction Temperature Range
TJ
40 to +125
°C
Storage Temperature Range
Tstg
40 to +150
°C

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

MCR25D datasheet

MCR25D
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