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MCT3D65P100F2

Specifications MCTV75P60E1MCTA75P60E1 NITS Peak Off-State Voltage (See Figure 11). VDRM -1000 V Peak Reverse Voltage . VRRM 5 V Continuous Cathode Current (See Figure 2)TC = +25oC (Package Limited) IK25 85 A TC = +90oC IK110 65...

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MCT3D65P100F2: Specifications MCTV75P60E1MCTA75P60E1 NITS Peak Off-State Voltage (See Figure 11). VDRM -1000 V Peak Reverse Voltage . VRRM 5 V Continuous Cathode ...

MCT3D65P100F2 Data Sheet

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Part Number:
MCT3D65P100F2
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5000

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Product Details

Description



Specifications
MCTV75P60E1
MCTA75P60E1
NITS
Peak Off-State Voltage (See Figure 11).
VDRM
-1000
V
Peak Reverse Voltage .
VRRM
5
V
Continuous Cathode Current (See Figure 2)
TC = +25oC (Package Limited)
IK25
85
A
TC = +90oC
IK110
65
A
Non-Repetitive Peak Cathode Current (Note 1)
IKSM
2000
A
Peak Controllable Current (See Figure 10)
IKC
100
A
Gate-Anode Voltage (Continuous)
VGA
±15
V
Gate-Anode Voltage (Peak)
VGAM
±20
V
Rate of Change of Voltage
dv/dt
 Figure 11
Rate of Change of Current
dI/dt
2000
A/ms
Maximum Power Dissipation
PT
290
W
Linear Derating Factor
2.23
W/oC
Operating and Storage Temperature
T J, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
(0.063" (1.6mm) from case for 10s)
TL
300
oC


CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

1. Maximum Pulse Width of 200ms (Half Sine). Assume TJ(Initial) = 90oC and TJ(Final) = TJ(Max) = 150oC.




Description

The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. MCT3D65P100F2 is designed for use in motor controls, inverters, line switches, and other power switching applications.

The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss.


MCT3D65P100F2s allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to 150oC with active switching.

Formerly developmental type TA49226.




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