MCT4

Maximum Collector Current :
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Maximum Power Dissipation : 250 mW
Packaging : Bulk
Maximum Operating Temperature : + 125 C
Input Type : DC
Maximum Collector Emitter Voltage : 30 V
Maximum Collector Emitter Saturation Voltage : 0.5 V
Current Transfer Ratio : 35 %
Isolation Voltage : 1000 Vrms
Package / Case : TO-18


Features:

• Hermetically package
• High current transfer ratio; typically 35%
• High isolation resistance; 1011 ohms at 500 volts
• High voltage isolation emitter to detector

Specifications

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter	Symbol	Rating	Unit
Operating Temperature	TOPR	-55 to +125	°C
Storage Temperature	TSTG	-65 to +150	°C
Soldering Temperature (Flow)	T SOL-F	260 for 10 sec	°C
EMITTER P Power Dissipation at 25°C Ambient (1)	PD	90	mW
Continuous Forward Current	IF	40	mA
Reverse Voltage	VR	3	V
Forward Current - Peak (1 s pulse, 300 pps)	IF(pk)	3.0	A
DETECTOR Power Dissipation 25°C Ambient (2)	P D	200	mW
Collector to Emitter Voltage	VCEO	30	V
Emitter to Collector Voltage	VECO	7	V
COUPLER Total Power Dissipation (3)	PD	250	mW
Isolation Voltage		1000	VDC

Description

The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon planar phototransistor.

Parameters:

Technical/Catalog Information	MCT4
Vendor	Fairchild Optoelectronics Group
Category	Isolators
Isolation Voltage	1000VDC
Input Type	DC
Output Type	Transistor
Current - Output/Channel	-
Voltage - Output	30V
Vce Saturation (Max)	500mV
Current Transfer Ratio (Min)	15% @ 10mA
Mounting Type	Through Hole
Package / Case	TO-18
Packaging	-
Number of Circuits	1 - Single
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MCT4 MCT4