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Part Number: MDS170L
Description: The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the f...


Description: The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the f...
The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. Low thermal resistance Solder Sealed Package reduces junction temperature, extends life.
Maximum Power Dissipation @ 25 ..350 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage......50 Volts
BVebo Emitter to Base Voltage ......3.5 Volts
Ic Collector Current ............15 Amps
Maximum Temperatures
Storage Temperature .......-65 to + 200
Operating Junction Temperature......+ 200
MDS170L
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