MDS170L Selling Leads, Price trend, MDS170L DataSheet download, circuit diagram from SeekIC.com

SpecificationsMaximum Power Dissipation @ 25 ..350 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage......50 VoltsBVebo Emitter to Base Voltage ......3.5 VoltsIc Collector Current ............15 AmpsMaximum TemperaturesStorage Temperature .......-65 to + 200Operating Junction Tempera...

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SeekIC No. : 004419041 Detail

MDS170L: SpecificationsMaximum Power Dissipation @ 25 ..350 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage......50 VoltsBVebo Emitter to Base Voltage ......3.5 VoltsIc Collector Current .......

MDS170L Data Sheet

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Part Number:: MDS170L
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/27

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Product Details

Description

Specifications

Maximum Power Dissipation @ 25 ..350 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage......50 Volts
BVebo Emitter to Base Voltage ......3.5 Volts
Ic Collector Current ............15 Amps
Maximum Temperatures
Storage Temperature .......-65 to + 200
Operating Junction Temperature......+ 200

Description

The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The transistor includes input and output prematch for broadband performance. The MDS170L device has gold thin-film metallization and diffused ballasting for proven highest MTTF. Low thermal resistance Solder Sealed Package reduces junction temperature, extends life.

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MDS170L

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