Purchase MDS35, In-stock MDS35 From SeekIC.


Part Number: MDS35
Description: Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They a...


Description: Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They a...
Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power applications, using phase controlled bridges, such as soft-start circuits, welding equipment, motor speed controller. The compactness of the ISOTOP package allows high power density and optimized power bus connections. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (File ref: E81734).
|
Symbol |
Parameter |
Value |
Unit | ||||
|
35 |
50 |
80 | |||||
|
I T(RMS) |
RMS on-state current |
50 |
70 |
85 |
A | ||
|
I T(AV) |
Average on-state current (Single phase-circuit, 180° conduction angle per device) |
Tc=85°C |
25 |
35 |
55 |
A | |
|
I TSM I FSM |
Non repetitive surge peak on-state current (Tj initial = 25°C) |
tp = 8.3 ms |
Tj = 25°C |
420 |
630 |
730 |
A |
|
tp = 10 ms |
400 |
600 |
700 | ||||
|
I²t |
I²t Value for fusing |
tp = 10 ms |
Tj = 25°C |
800 |
1800 |
2450 |
A2S |
|
dI/dt |
Critical rate of rise of on-state current IG = 2 x IGT , tr £ 100 ns |
F = 60 Hz |
Tj = 125°C |
50 |
A/s | ||
|
IGM |
Peak gate current |
tp = 20 s |
Tj = 125°C |
4 |
A | ||
|
P G(AV) |
Average gate power dissipation |
Tj = 125°C |
1 |
W | |||
|
Tstg T j |
Storage junction temperature range Operating junction temperature range |
- 40 to + 150 - 40 to + 125 |
°C | ||||
|
VRGM |
Maximum peak reverse SCR gate voltage |
5 |
V | ||||
|
Symbol |
Value |
Unit |
|
I T(RMS) |
50-70-85 |
A |
|
VDRM/VRRM |
800 and 1200 |
V |
|
IGT |
50 and 100 |
mA |
MDS35
PDF/DataSheet Download








