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Part Number: MDS35

 

 

 

 

Description: Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They a...


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MDS35 General Description


Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power applications, using phase controlled bridges, such as soft-start circuits, welding equipment, motor speed controller. The compactness of the ISOTOP package allows high power density and optimized power bus connections. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (File ref: E81734).

MDS35 Maximum Ratings

Symbol
Parameter
Value
Unit
35
50
80
I T(RMS)
RMS on-state current
50
70
85
A
I T(AV)
Average on-state current
(Single phase-circuit, 180° conduction angle per device)
Tc=85°C
25
35
55
A
I TSM
I FSM
Non repetitive surge peak on-state
current (Tj initial = 25°C)
tp = 8.3 ms
Tj = 25°C
420
630
730
A
tp = 10 ms
400
600
700
I²t
I²t Value for fusing
tp = 10 ms
Tj = 25°C
800
1800
2450
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr £ 100 ns
F = 60 Hz
Tj = 125°C
50
A/s
IGM
Peak gate current
tp = 20 s
Tj = 125°C
4
A
P G(AV)
Average gate power dissipation
Tj = 125°C
1
W
Tstg
T j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
VRGM
Maximum peak reverse SCR gate voltage
5
V

MDS35 Features

Symbol
Value
Unit
I T(RMS)
50-70-85
A
VDRM/VRRM
800 and 1200
V
IGT
50 and 100
mA

MDS35 Connection Diagram

MDS35  Connection Diagram

MDS35 datasheet

MDS35
PDF/DataSheet Download

  • Datasheet: MDS35
  • File Size: 408639 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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