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ME70N03

Features: ·Advanced trench process technology·High Density Cell Design For Ultra Low On-Resistance·Specially Designed for DC/DC Converters and Motor Drivers·Fully Characterized Avalanche Voltage and CurrentSpecifications PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS...

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ME70N03: Features: ·Advanced trench process technology·High Density Cell Design For Ultra Low On-Resistance·Specially Designed for DC/DC Converters and Motor Drivers·Fully Characterized Avalanche Voltage and...

ME70N03 Data Sheet

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Part Number:
ME70N03
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

·Advanced trench process technology
·High Density Cell Design For Ultra Low On-Resistance
·Specially Designed for DC/DC Converters and Motor Drivers
·Fully Characterized Avalanche Voltage and Current


Specifications

PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
60
A
Pulsed Drain Current (Note 1, 2)
IDM
350
A
Total Power Dissipation TA=25
PD
70
W
TA=100
42
Junction Temperature
TJ
-55 to 150
Storage Temperature Range
TSTG
Avalanche Energy with Single Pulse
ID=50A,VDD=25V,L=0.5mH
EAS
300
mJ
Junction-to-Case Thermal Resistance
RJA
1.8
Junction-to-Ambient Thermal Resistance
PCD mounted)2)
RJA
40
/W



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