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Part Number: MG1070
Description: The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Seve...
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MG1070
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General Description
MG1070 General Description
The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS process.
The MG1 series base cell architecture provides high routability of logic with extremely dense compiled memories : RAM, DPRAM and FIFO, ROM can be generated using synthesis tools. For instance, the largest array is capable of integrating 128K bits of DPRAM with 128K bits of ROM and over 200,000 random gates.
Accurate control of clock distribution can be achieved by PLL hardware and CTS (Clock Tree Synthesis) software. New noise prevention techniques are applied in the array and in the periphery : Three or more independent supplies, internal decoupling, customisation dependent supply routing, noise filtering, skew controlled I/Os, low swing differential I/Os, all contribute to improve the noise immunity and reduce the emission level.
The MG1 is supported by an advanced software environment based on industry standards linking proprietary and commercial tools. Cadence, Compass, Mentor, Synopsys and VHDL are the reference front end tools. Floor planning associated with timing driven layout provides a short back end cycle.
The MG1 family continues the TEMIC offering in array based commercial, automotive, industrial, military and space circuits.
MG1070 Maximum Ratings
Ambient temperature under bias (TA)
Military . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125
Junction temperature . . . . . . . . . . . . . . . . . . . . TJ < TA + 20
Storage temperature . . . . . . . . . . . . . . . . . . . . 65 to +150
TTL/CMOS :
Supply voltage VDD . . . . . . . . . . . . . . . . . . . . . 0.5 V to +7 V
I/O voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to VDD + 0.5 V
Stresses above those listed may cause permanent damage to the device. Explosure to absolute maximum rating conditions for extended period may affect device reliability.
Military . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125
Junction temperature . . . . . . . . . . . . . . . . . . . . TJ < TA + 20
Storage temperature . . . . . . . . . . . . . . . . . . . . 65 to +150
TTL/CMOS :
Supply voltage VDD . . . . . . . . . . . . . . . . . . . . . 0.5 V to +7 V
I/O voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to VDD + 0.5 V
Stresses above those listed may cause permanent damage to the device. Explosure to absolute maximum rating conditions for extended period may affect device reliability.
MG1070 Features
Full Range of Matrices up to 500k Cells
0.6 m Drawn CMOS, 3 Metal Layers, Sea of Gates
RAM, DPRAM, FIFO Compilers
Library Optimised for Synthesis, Floor Plan & Automatic Test Generation (ATG)
High Speed Performances :
250 ps Typical Gate Delay @5 V
350 MHz Toggle Frequency @5 V
High System Frequency Skew Control :
250 MHz PLL for Clock Generation
Clock Tree Synthesis Software
3 & 5 Volts Operation; Single or Dual Supply Modes
Low Power Consumption :
0.9 W/Gate/MHz @3 V
2.4 W/Gate/MHz @5 V
Integrated Power on Reset
Matrices With More than 500 Pads
Standard 3, 6, 12m, 24mA I/Os, parallelism up to 48mA
Versatile I/O Cell : Input, Output, I/O, Supply, Oscillator
CMOS/TTL/PCI Interface
ESD (2 kV) And Latch-up Protected I/O
High Noise & EMC Immunity :
I/O with Slew Rate Control
Internal Decoupling
Signal Filtering between Periphery & Core
Application Dependent Supply Routing & Several Independent Supply Sources
Wide Range of Packages Including PGA & CQFP
Delivery in Die Form
Advanced CAD Support : Floor Plan, Proprietary Delay Models, Timing Driven Layout, Power Management
Cadence, Compass, Mentor & Synopsys Reference Platforms
EDIF & VHDL Reference Formats
Upward Compatibility With MC & MF Gate Arrays, MCM Composite Arrays.
Full Compatibility with MG1M Composite Sea of Gates Series
Available In Commercial, Industrial, Automotive, Military & Space Quality Grades
Special Versions on Radiation Tolerant Process
QML Q
0.6 m Drawn CMOS, 3 Metal Layers, Sea of Gates
RAM, DPRAM, FIFO Compilers
Library Optimised for Synthesis, Floor Plan & Automatic Test Generation (ATG)
High Speed Performances :
250 ps Typical Gate Delay @5 V
350 MHz Toggle Frequency @5 V
High System Frequency Skew Control :
250 MHz PLL for Clock Generation
Clock Tree Synthesis Software
3 & 5 Volts Operation; Single or Dual Supply Modes
Low Power Consumption :
0.9 W/Gate/MHz @3 V
2.4 W/Gate/MHz @5 V
Integrated Power on Reset
Matrices With More than 500 Pads
Standard 3, 6, 12m, 24mA I/Os, parallelism up to 48mA
Versatile I/O Cell : Input, Output, I/O, Supply, Oscillator
CMOS/TTL/PCI Interface
ESD (2 kV) And Latch-up Protected I/O
High Noise & EMC Immunity :
I/O with Slew Rate Control
Internal Decoupling
Signal Filtering between Periphery & Core
Application Dependent Supply Routing & Several Independent Supply Sources
Wide Range of Packages Including PGA & CQFP
Delivery in Die Form
Advanced CAD Support : Floor Plan, Proprietary Delay Models, Timing Driven Layout, Power Management
Cadence, Compass, Mentor & Synopsys Reference Platforms
EDIF & VHDL Reference Formats
Upward Compatibility With MC & MF Gate Arrays, MCM Composite Arrays.
Full Compatibility with MG1M Composite Sea of Gates Series
Available In Commercial, Industrial, Automotive, Military & Space Quality Grades
Special Versions on Radiation Tolerant Process
QML Q
MG1
PDF/DataSheet Download
- Datasheet: MG1
- File Size: 147159 KB
- Manufacturer: Atmel
- Click here to Download
- ·MG100G1AL3
- TRANSISTOR,BJT POWER MODULE,DARLINGTON,450V V(BR)CEO,100A I(C)
- 395950 KB
- ·MG100G2CL1
- TOSHIBA [Toshiba Semiconductor]
- TECHNICAL DATA
- 589613 KB
- ·MG100G2DL1
- TOSHIBA [Toshiba Semiconductor]
- TECHNICAL DATA
- 589613 KB
- ·MG100G2JL1
- TOSHIBA [Toshiba Semiconductor]
- TECHNICAL DATA
- 589613 KB
- ·MG100G2YK1
- ETC [ETC]
- TRANSISTOR MODULES
- 306881 KB
- ·MG100G2YL1
- ETC [ETC]
- TRANSISTOR MODULES
- 49152 KB
- ·MG100H2YL1
- ETC [ETC]
- TRANSISTOR MODULES
- 306881 KB
- ·MG100J1BS11
- TOSHIBA [Toshiba Semiconductor]
- N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
- 220955 KB
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