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Part Number: MG11

 

 

 

 

 

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MG11 Maximum Ratings

Ambient temperature under bias (TA)
Military . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . 55 to +125°C
Junction temperature . . . . . . . . . . . . . . . . . . TJ < TA + 20°C
Storage temperature . . . . . . . . . . . . . . . . . . 65 to +150°C
TTL/CMOS :
Supply voltage VDD . . . . . . . . . . . . . . . . . . . 0.5 V to +7 V
I/O voltage . . . . . . . . . . . . . . . .. . . . 0.5 V to VDD + 0.5 V
Stresses above those listed may cause permanent damage to the device. Explosure to absolute maximum rating conditions for extended period may affect device reliability.

MG11 Features

Full Range of Matrices up to 500k Cells
0.6 m Drawn CMOS, 3 Metal Layers, Sea of Gates
RAM, DPRAM, FIFO Compilers
Library Optimised for Synthesis, Floor Plan & Automatic
Test Generation (ATG)
High Speed Performances :
  250 ps Typical Gate Delay @5 V
  350 MHz Toggle Frequency @5 V
High System Frequency Skew Control :
  250 MHz PLL for Clock Generation
  Clock Tree Synthesis Software
3 & 5 Volts Operation; Single or Dual Supply Modes
Low Power Consumption :
  0.9 W/Gate/MHz @3 V
  2.4 W/Gate/MHz @5 V
Integrated Power on Reset
Matrices With More than 500 Pads
Standard 3, 6, 12m, 24mA I/Os, parallelism up to 48mA
Versatile I/O Cell : Input, Output, I/O, Supply, Oscillator
CMOS/TTL/PCI Interface
ESD (2 kV) And Latch-up Protected I/O

MG11 datasheet

MG113P
PDF/DataSheet Download

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