MG11 Maximum Ratings
Ambient temperature under bias (TA)
Military . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . 55 to +125°C
Junction temperature . . . . . . . . . . . . . . . . . . TJ < TA + 20°C
Storage temperature . . . . . . . . . . . . . . . . . . 65 to +150°C
TTL/CMOS :
Supply voltage VDD . . . . . . . . . . . . . . . . . . . 0.5 V to +7 V
I/O voltage . . . . . . . . . . . . . . . .. . . . 0.5 V to VDD + 0.5 V
Stresses above those listed may cause permanent damage to the device. Explosure to absolute maximum rating conditions for extended period may affect device reliability.
MG11 Features
Full Range of Matrices up to 500k Cells
0.6 m Drawn CMOS, 3 Metal Layers, Sea of Gates
RAM, DPRAM, FIFO Compilers
Library Optimised for Synthesis, Floor Plan & Automatic
Test Generation (ATG)
High Speed Performances :
250 ps Typical Gate Delay @5 V
350 MHz Toggle Frequency @5 V
High System Frequency Skew Control :
250 MHz PLL for Clock Generation
Clock Tree Synthesis Software
3 & 5 Volts Operation; Single or Dual Supply Modes
Low Power Consumption :
0.9 W/Gate/MHz @3 V
2.4 W/Gate/MHz @5 V
Integrated Power on Reset
Matrices With More than 500 Pads
Standard 3, 6, 12m, 24mA I/Os, parallelism up to 48mA
Versatile I/O Cell : Input, Output, I/O, Supply, Oscillator
CMOS/TTL/PCI Interface
ESD (2 kV) And Latch-up Protected I/O
Map list: ABCDEFGHIJKLMNOPQRSTUVWXYZ 0123456789All