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MFG:TOSHIBA D/C:7IGBT: 150A600V
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MG150J7KS50
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Suppliers
DataSheet
General Description
MG150J7KS50 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 600 | V | |
| Gate-emitter voltage | VGES | ±20 | V | |
| Collector current | DC | IC | 150 | A |
| 1ms | ICP | 300 | ||
| Forward current | DC | IF | 150 | A |
| 1ms | IFM | 300 | ||
| Total power dissipation (Tc=25°C) | PC | 320 | W | |
| Junction temperature | Tj | 150 | ||
| Storage temperature range | Tstg | −40 ~ 125 | ||
| Isolation voltage | VIsol | 2500 (AC 1 min.) |
V | |
| Screw torque (Terminal / mounting) | 3 / 3 | N`m | ||
MG150J7KS50 Typical Application
·The electrodes are isolated from case.
·High input impedance
·7 IGBTs built into 1 package.
·Enhancement-mode
·High speed type IGBT : Inverter stage
: VCE (sat) = 2.8V (max) (@IC = 150A)
: tf = 0.5µs (max) (@IC = 150A)
: trr = 0.3µs (max) (@IF = 150A)
·Outline : TOSHIBA 2-110A1B
·Weight: 520g
·High input impedance
·7 IGBTs built into 1 package.
·Enhancement-mode
·High speed type IGBT : Inverter stage
: VCE (sat) = 2.8V (max) (@IC = 150A)
: tf = 0.5µs (max) (@IC = 150A)
: trr = 0.3µs (max) (@IF = 150A)
·Outline : TOSHIBA 2-110A1B
·Weight: 520g
MG150J7KS50
PDF/DataSheet Download
- Datasheet: MG150J7KS50
- File Size: 122087 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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