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MGF0911A

Features: • Class A operation• High output power P1dB=41dBm(TYP) @2.3GHz• High power gain GLP=11dB(TYP) @2.3GHz• High power added efficiency hadd=40%(TYP) @2.3GHz,P1dB• Hermetically sealed metal-ceramic package with ceramic lidApplication·UHF band power amplifiersSpec...

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SeekIC No. : 004419807 Detail

MGF0911A: Features: • Class A operation• High output power P1dB=41dBm(TYP) @2.3GHz• High power gain GLP=11dB(TYP) @2.3GHz• High power added efficiency hadd=40%(TYP) @2.3GHz,P1dB•...

MGF0911A Data Sheet

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Part Number:
MGF0911A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Class A operation
• High output power P1dB=41dBm(TYP) @2.3GHz
• High power gain GLP=11dB(TYP) @2.3GHz
• High power added efficiency hadd=40%(TYP) @2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid






Application

·UHF band power amplifiers




Specifications

Symbol Parameter Ratings Unit
VGSO Gate to sourcebreakdown voltage -15 V
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 10 mA
IGR Reverse gate current 30 mA
IGF Forward gate current 63 mA
PT Total power dissipation 37.5 W
Tch Cannel temperature 175 °C
Tstg Storage temperature -65 to +175 °C





Description

The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.




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