MGF0917A

Features: · High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm· High power gain Gp=21dB(TYP.) @f=1.9GHz· High power added efficiency hadd=38%(TYP.) @f=1.9GHz,Pin=4dBm· Hermetic PackageApplication· For UHF Band power amplifiersSpecifications Symbol Parameter Ratings Unit VGSO Gate to s...

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SeekIC No. : 004419813 Detail

MGF0917A: Features: · High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm· High power gain Gp=21dB(TYP.) @f=1.9GHz· High power added efficiency hadd=38%(TYP.) @f=1.9GHz,Pin=4dBm· Hermetic PackageApplication· ...

floor Price/Ceiling Price

Part Number:
MGF0917A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/14

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Product Details

Description



Features:

· High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
· High power gain Gp=21dB(TYP.) @f=1.9GHz
· High power added efficiency hadd=38%(TYP.) @f=1.9GHz,Pin=4dBm
· Hermetic Package



Application

· For UHF Band power amplifiers


Specifications

Symbol Parameter Ratings Unit
VGSO Gate to sourcebreakdown voltage -15 V
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 200 mA
IGR Reverse gate current -0.6 mA
IGF Forward gate current 2.5 mA
PT Total power dissipation 2 W
Tch Cannel temperature 175 °C
Tstg Storage temperature -65 to +175 °C



Description

The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.


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