MGF0919A Selling Leads, Price trend, MGF0919A DataSheet download, circuit diagram from SeekIC.com

Features: · High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm· High power gain Gp=19dB(TYP.) @f=1.9GHz· High power added efficiency hadd=37%(TYP.) @f=1.9GHz,Pin=12dBm· Hermetic PackageApplication· For UHF Band power amplifiersSpecifications Symbol Parameter Ratings Unit VGSO Gate to...

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SeekIC No. : 004419815 Detail

MGF0919A: Features: · High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm· High power gain Gp=19dB(TYP.) @f=1.9GHz· High power added efficiency hadd=37%(TYP.) @f=1.9GHz,Pin=12dBm· Hermetic PackageApplication...

MGF0919A Data Sheet

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Part Number:: MGF0919A
Supply Ability:: 5000

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Upload time: 2024/5/22

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Product Details

Description

Features:

· High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
· High power gain Gp=19dB(TYP.) @f=1.9GHz
· High power added efficiency hadd=37%(TYP.) @f=1.9GHz,Pin=12dBm
· Hermetic Package

Application

· For UHF Band power amplifiers

Specifications

Symbol	Parameter	Ratings	Unit
V_GSO	Gate to sourcebreakdown voltage	-15	V
V_GDO	Gate to drain breakdown voltage	-15	V
I_D	Drain current	800	mA
I_GR	Reverse gate current	-2.4	mA
I_GF	Forward gate current	10	mA
P_T	Total power dissipation	6	W
T_ch	Cannel temperature	175	°C
T_stg	Storage temperature	-65 to +175	°C

Description

The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

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MGF0919A

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