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MGF0952P

Features: • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm• High power gain Glp=13.5dB(TYP.) @f=2.15GHz• High power added efficiency add=50%(TYP.) @f=2.15GHz,Pin=25dBm• Plastic Mold Lead-less PKGApplication• For L/S Band power amplifiersSpecifications Par...

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MGF0952P: Features: • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm• High power gain Glp=13.5dB(TYP.) @f=2.15GHz• High power added efficiency add=50%(TYP.) @f=2.15GHz,Pin=25dBm̶...

MGF0952P Data Sheet

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Part Number:
MGF0952P
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm
• High power gain Glp=13.5dB(TYP.) @f=2.15GHz
• High power added efficiency add=50%(TYP.) @f=2.15GHz,Pin=25dBm
• Plastic Mold Lead-less PKG




Application

• For L/S Band power amplifiers




Specifications

Parameter
Symbol
Ratings
Unit
Gate to sourcebreakdown voltage VGSO
-15
V
Gate to drain breakdown voltage VGDO
-15
V
Drain current ID
3.5
A
Reverse gate current IGR
-10
mA
Forward gate current IGF
21
mW
Total power dissipation PT
20.0
W
Total power dissipation Tch
150
°C
Storage temperature Tstg
-65 to +175
V





Description

The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.




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