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MFG:MITSUBSHI  Package Cooled:MODULE  D/C:N/A  

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Part Number: MGFC39V3436

 

MFG: MITSUBSHI

Package Cooled: MODULE

D/C: N/A

Description: The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 -...


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MGFC39V3436 General Description


The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC39V3436 Maximum Ratings

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
7.5
A
Reverse gate current
IGR
-20
mA
Forward gate current
IGF
42
mA
Total power dissipation *1
PT
42.8
W
Channel temperature
Tch
175
deg.C
Storage temperature
Tstg
65 /+175
deg.C

MGFC39V3436 Features

·Class A operation
·Internally matched to 50(ohm) system
·High output power
·P1dB = 8W (TYP.) @ f=3.4 - 3.6 GHz
·High power gain
·GLP = 11 dB (TYP.) @ f=3.4 - 3.6GHz
·High power added efficiency
·P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz
·Low distortion [item -51]
·IM3=-45dBc(Typ.) @Po=28dBm S.C.L.

MGFC39V3436 Typical Application

·item 01 : 3.4 - 3.6 GHz band power amplifier
·item 51 : 3.4 - 3.6 GHz band digital ratio communication

MGFC39V3436 datasheet

MGFC39V3436
PDF/DataSheet Download

  • Datasheet: MGFC39V3436
  • File Size: 136417 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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