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MGFC39V6472A

Features: Class A operationInternally matched to 50(ohm) systemHigh output powerP1dB = 8W (TYP.) @ f=6.4~7.2GHzHigh power gainGLP = 9 dB (TYP.) @ f=6.4~7.2GHzHigh power added efficiencyP.A.E. = 28 % (TYP.) @ f=6.4~7.2GHzLow distortion [ item -51 ]IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.Applicationitem ...

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MGFC39V6472A: Features: Class A operationInternally matched to 50(ohm) systemHigh output powerP1dB = 8W (TYP.) @ f=6.4~7.2GHzHigh power gainGLP = 9 dB (TYP.) @ f=6.4~7.2GHzHigh power added efficiencyP.A.E. = 28 %...

MGFC39V6472A Data Sheet

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Part Number:
MGFC39V6472A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 8W (TYP.) @ f=6.4~7.2GHz
High power gain
GLP = 9 dB (TYP.) @ f=6.4~7.2GHz
High power added efficiency
P.A.E. = 28 % (TYP.) @ f=6.4~7.2GHz
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.




Application

item 01 : 6.4~7.2 GHz band power amplifier
item 51 : 6.4~7.2 GHz band digital radio communication




Specifications

Symbol
Parameter
Ratings
Unit
VGDO
 Gate to drain voltage
-15
V
VGSO
 Gate to source voltage
-15
V
ID
 Drain current
7.5
A
IGR
 Reverse gate current
-20
mA
IGF
 Forward gate current
42
mA
PT
 Total power dissipation *1
42.8
W
Tch
 Channel temperature
175
deg.C
Tstg
 Storage temperature
-65/+175
deg.C





Description

The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.




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