MGFC4419G

Features: ·Low noise figure·NFmin,=0.5 dB (MAX.) @ f=12GHz·High associated gain·Gs=12.0 dB (MIN.) @ f=12GHzApplication·X to K band amplifiers.Specifications Parameter Symbol Ratings Unit Gate to drain voltage VGDO -4 V Gate to source voltage VGS...

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SeekIC No. : 004419889 Detail

MGFC4419G: Features: ·Low noise figure·NFmin,=0.5 dB (MAX.) @ f=12GHz·High associated gain·Gs=12.0 dB (MIN.) @ f=12GHzApplication·X to K band amplifiers.Specifications Parameter Symbol Rating...

floor Price/Ceiling Price

Part Number:
MGFC4419G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Description



Features:

·Low noise figure
·NFmin,=0.5 dB (MAX.) @ f=12GHz
·High associated gain
·Gs=12.0 dB (MIN.) @ f=12GHz



Application

·X to K band amplifiers.


Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-4
V
Gate to source voltage
VGSO
-4
V
Drain current
ID
60
mA
Total power dissipation *1
PT
50
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
65 /+125
°C



Description

The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers.


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