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MFG:MITSUBSHI  Package Cooled:MODULE  D/C:N/A  

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Part Number: MGFC45V5053A

 

MFG: MITSUBSHI

Package Cooled: MODULE

D/C: N/A

Description: The MGFC45V5053A is an internally impedance matched GaAs power FET especially desig...


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MGFC45V5053A General Description


The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC45V5053A Maximum Ratings

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
20
A
Reverse gate current
IGR
-80
mA
Forward gate current
IGF
168
mA
Total power dissipation
PT
150
W
Channel temperature
Tch
175
Storage temperature
Tstg
65 /+175

MGFC45V5053A Features

·Internally matched to 50 (W) system
·High output power
·P1dB=32W (TYP.) @f=5.05~5.25GHz
·High power gain
·GLP=10.0dB (TYP.) @f=5.05~5.25GHz
·High power added efficiency
·P.A.E.=33% (TYP.) @f=5.05~5.25GHz
·Low distortion [item -51]
·IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.

MGFC45V5053A Typical Application

·5.05~5.25GHz band amplifiers

MGFC45V5053A datasheet

MGFC45V5053A
PDF/DataSheet Download

  • Datasheet: MGFC45V5053A
  • File Size: 17277 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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Related Part Number

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