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MFG:MITSUBSHI  Package Cooled:MODULE  D/C:N/A  

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Part Number: MGFC45V6472A

 

MFG: MITSUBSHI

Package Cooled: MODULE

D/C: N/A

Description: The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-...


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MGFC45V6472A General Description


The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC45V6472A Maximum Ratings

Symbol Parameter Ratings Unit
VGSO Gate to sourcebreakdown voltage -15 V
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 30 mA
IGR Reverse gate current -60 mA
IGF Forward gate current 126 mA
PT Total power dissipation 125 W
Tch Cannel temperature 175 °C
Tstg Storage temperature -65 to +175 °C

MGFC45V6472A Features

·Class A operation
·Internally matched to 50(ohm) system
·High output power P1dB = 32W (TYP.) @ f=6.4-7.2 GHz
·High power gain GLP = 8 dB (TYP.) @ f=6.4-7.2GHz
·High power added efficiency PAE = 28 % (TYP.) @ f=6.4-7.2GHz
·Low distortion [item -51] IM3=-42dBc(min.) @Po=34.5dBm S.C.L.
·Thermal Resistance Rth(ch-c)=1.0 deg.C/W(MAX.)

MGFC45V6472A Typical Application

item 01 : 6.4-7.2 GHz band power amplifier
item 51 : 6.4-7.2 GHz band digital ratio communication

MGFC45V6472A datasheet

MGFC45V6472A
PDF/DataSheet Download

  • Datasheet: MGFC45V6472A
  • File Size: 42563 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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