Purchase MGFC47B3436B, In-stock MGFC47B3436B From SeekIC.
Package Cooled:MIT D/C:0-500
- Table of contents:
MGFC47B3436B
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Suppliers
DataSheet
General Description
MGF 1001 P
PDF/DataSheet Download
- Datasheet: MGF 1001 P
- File Size: 113211 KB
- Manufacturer: Mitsubishi
- Click here to Download
- ·MGF 1302
- Mitsubishi
- LOW NOISE GAAS FET
- 216069 KB
- ·MGF 1303B
- Mitsubishi
- LOW NOISE GAAS FET
- 179532 KB
- ·MGF 1923
- Mitsubishi
- TAPE CARRIER SMALL SIGNAL GAAS FET
- 267854 KB
- ·MGF 2407A
- Mitsubishi
- MICROWAVE POWER GaAs FET
- 89186 KB
- ·MGF 2415A
- Mitsubishi
- MICROWAVE POWER GaAs FET
- 89603 KB
- ·MGF 2430A
- Mitsubishi
- MICROWAVE POWER GaAs FET
- 89646 KB
- ·MGF 2445
- Mitsubishi
- MICROWAVE POWER GaAs FET
- 91162 KB
- ·MGF 2445A
- Mitsubishi
- MICROWAVE POWER GAAS FET
- 106795 KB
MGFC47B3436B Relative Products
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MGFC47A4450
The MGFC47A4450 is device is an internally impendance-matched GaAs power FET especially designed for use in 4.4 to 5.0GHz band amplifiers.The hermetically sealed metal-ceramic package gurantees high reliability. The MGFC47A4450 has five features.The first o...
MGFC45V6472A
The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
MGFC45V5964A
The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
MGFC45V5867
The MGFC45V5867 device is an internally impendance-matched GaAs power FET especially designed for use in 5.8 to 6.75GHz band amplifiers.The hermetically sealed metal-ceramic package gurantees high reliability. The MGFC45V5867 has four features.The first one...
MGFC45V5053A
The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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