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MGFK30V4045

Features: · Internally impedance matched· Flip-chip mounted· High output power P1dB = 1.1W(TYP.) @f=14.0-14.5GHz· High linear power gain GLP = 8.0dB(TYP.) í @f=14.0-14.5GHz· High power added efficiency· íP.A.E.ý24æèTYP.)íí@f=14.0-14.5GHzApplicationFor use in 14.0-14.5GHz band amp...

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MGFK30V4045: Features: · Internally impedance matched· Flip-chip mounted· High output power P1dB = 1.1W(TYP.) @f=14.0-14.5GHz· High linear power gain GLP = 8.0dB(TYP.) í @f=14.0-14.5GHz· High power added ef...

MGFK30V4045 Data Sheet

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Part Number:
MGFK30V4045
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Internally impedance matched
· Flip-chip mounted
· High output power
  P1dB = 1.1W(TYP.) @f=14.0-14.5GHz
· High linear power gain
  GLP = 8.0dB(TYP.) í @f=14.0-14.5GHz
· High power added efficiency
·  íP.A.E.ý24æèTYP.)íí@f=14.0-14.5GHz


Application

For use in 14.0-14.5GHz band amplifiers


Specifications

Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO Gate to source voltage -15 V
ID Drain current 1000 mA
IGR Reverse gate current -3 mA
IGF Forward gate current 5 mA
PT Total power dissipation 11 W
Tch Channel temperature 175 deg.C
Tstg Storage temperature -65 / +175 deg.C



Description

The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability




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