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MFG:MITSUBSHI  Package Cooled:MODULE  D/C:N/A  

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Part Number: MGFS45V2123

 

MFG: MITSUBSHI

Package Cooled: MODULE

D/C: N/A

Description: The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2...


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MGFS45V2123 General Description


The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFS45V2123 Maximum Ratings

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
22
A
Reverse gate current
IGR
-61
mA
Forward gate current
IGF
76
mA
Total power dissipation *1
PT
88
W
Channel temperature
Tch
175
°C
Storage temperature
Tstg
65 /+175
°C

MGFS45V2123 Features

·Class A operation
·High power gain
·GLP=12dB (TYP.) @f=2.1~2.3GHz
·High power added efficiency
·hadd=45% (TYP.) @f=2.1~2.3GHz
·Loe distortion [item -51]
·IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
·High output power
·P1dB=30W (TYP.) @f=2.1~2.3GHz
·Internally matched to 50 (W) system

MGFS45V2123 Typical Application

·item 01 : 2.1~2.3GHz band power amplifier
·item 51 : 2.1~2.3GHz band digital radio communication

MGFS45V2123 datasheet

MGFS45V2123
PDF/DataSheet Download

  • Datasheet: MGFS45V2123
  • File Size: 26467 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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