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Part Number: MGFS45V2527
Description: The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2...
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MGFS45V2527
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DataSheet
General Description
MGFS45V2527 General Description
The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS45V2527 Maximum Ratings
| Parameter |
Symbol |
Ratings |
Unit |
| Gate to drain voltage |
VGDO |
-15 |
V |
| Gate to source voltage |
VGSO |
-15 |
V |
| Drain current |
ID |
22 |
A |
| Reverse gate current |
IGR |
-61 |
mA |
| Forward gate current |
IGF |
76 |
mA |
| Total power dissipation *1 |
PT |
88 |
W |
| Channel temperature |
Tch |
175 |
deg.C |
| Storage temperature |
Tstg |
65 /+175 |
deg.C |
MGFS45V2527 Features
·Class A operation
·Internally matched to 50 (W) system
·High output power
·P1dB=30W (TYP.) @f=2.5~2.7GHz
·High power gain
·GLP=12dB (TYP.) @f=2.5~2.7GHz
·High power added efficiency
·hadd=45% (TYP.) @f=2.5~2.7GHz
·Loe distortion [item -51]
·IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
·Internally matched to 50 (W) system
·High output power
·P1dB=30W (TYP.) @f=2.5~2.7GHz
·High power gain
·GLP=12dB (TYP.) @f=2.5~2.7GHz
·High power added efficiency
·hadd=45% (TYP.) @f=2.5~2.7GHz
·Loe distortion [item -51]
·IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
MGFS45V2527 Typical Application
·item 01 : 2.5~2.7GHz band power amplifier
·item 51 : 2.5~2.7GHz band digital radio communication
·item 51 : 2.5~2.7GHz band digital radio communication
MGFS45V2527
PDF/DataSheet Download
- Datasheet: MGFS45V2527
- File Size: 32812 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
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MGFS45V2527 Relative Products
MGFS45V2325
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MGFS45V2123
The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS45B2527B
MGFS45A2527B
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