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Part Number: MGFS45V2527A
Description: The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 -...
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MGFS45V2527A
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DataSheet
General Description
MGFS45V2527A General Description
The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS45V2527A Maximum Ratings
|
Symbol |
Parameter |
Ratings |
Unit |
| VGDO VGSO ID IGR IGF PT *1 Tch Tstg |
Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature |
-15 -15 22 -61 76 88 175 -65 / +175 |
V V A mA mA W deg.C deg.C |
MGFS45V2527A Features
·Class A operation
·Internally matched to 50(ohm) system
·High output power P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz
·High power gain GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz
·High power added efficiency P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz
·Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
·Internally matched to 50(ohm) system
·High output power P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz
·High power gain GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz
·High power added efficiency P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz
·Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
MGFS45V2527A Typical Application
·item 01 : 2.5 - 2.7 GHz band power amplifier
·item 51 : 2.5 - 2.7 GHz band digital radio communication
·item 51 : 2.5 - 2.7 GHz band digital radio communication
MGFS45V2527A
PDF/DataSheet Download
- Datasheet: MGFS45V2527A
- File Size: 290189 KB
- Manufacturer: MITSUBISHI
- Click here to Download
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MGFS45V2527A Relative Products
MGFS45V2527
The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS45V2325
The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS45V2123A
MGFS45V2123
The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS45B2527B
MGFS45A2527B
The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
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