Purchase MGFS52B2122, In-stock MGFS52B2122 From SeekIC.
Package Cooled:MIT D/C:0-500
- Table of contents:
MGFS52B2122
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Suppliers
DataSheet
General Description
MGF 1001 P
PDF/DataSheet Download
- Datasheet: MGF 1001 P
- File Size: 113211 KB
- Manufacturer: Mitsubishi
- Click here to Download
- ·MGF 1302
- Mitsubishi
- LOW NOISE GAAS FET
- 216069 KB
- ·MGF 1303B
- Mitsubishi
- LOW NOISE GAAS FET
- 179532 KB
- ·MGF 1923
- Mitsubishi
- TAPE CARRIER SMALL SIGNAL GAAS FET
- 267854 KB
- ·MGF 2407A
- Mitsubishi
- MICROWAVE POWER GaAs FET
- 89186 KB
- ·MGF 2415A
- Mitsubishi
- MICROWAVE POWER GaAs FET
- 89603 KB
- ·MGF 2430A
- Mitsubishi
- MICROWAVE POWER GaAs FET
- 89646 KB
- ·MGF 2445
- Mitsubishi
- MICROWAVE POWER GaAs FET
- 91162 KB
- ·MGF 2445A
- Mitsubishi
- MICROWAVE POWER GAAS FET
- 106795 KB
MGFS52B2122 Relative Products
MGFS48V2527
The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS48B2122
The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS45V2527A
The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS45V2527
The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS45V2325
The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
MGFS45V2123A
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