MGFS52BN2122A

The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1-2.2GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

The MGFS52BN2122A has four features.The first one is push-pull configuration.The second one is high output power Pout=160W(TYP.)@ f=2.17GHz.The third one is high power gain GLP=12dB(TYP.)@f=2.17GHz.The fourth one is high power added efficiency P.A.E.=48%(TYP.)@f=2.17GHz.The MGFS52BN2122A has some absolute maximum ratings(Ta=25deg.C).When symbol is VGDD,the parameter is gate to drain voltage,the ratings is -20,the unit is V.When symbol is VGSO,the parameter is gate to source voltage,the ratings is -10,the unit is V.When symbol is PT,the parameter is total power dissipation,the ratings is 187.5,the unit is W.When symbol is Tch,the parameter is channel temperature,the ratings is 175,the unit is deg.C.When symbol is Tstg,the parameter is storage temperature,the ratings is -65 to +175,the unit is deg.C.

At present there is not too much information about this model.If you are willing to find more  about MGFS52BN2122A, please pay attention to our web! We will promptly update the relevant  information.