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MGP2N60D

Specifications Rating Symbol Value Unit CollectorEmitter Voltage VCES 600 Vdc CollectorGate Voltage (RGE = 1.0 MW) VCGR 600 Vdc GateEmitter Voltage - Continuous VGE ±15 Vdc Collector Current - Continuous @ TC = 25°C- Continuous @ TC = 90°C- Repetitive Pulsed Current (1...

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MGP2N60D: Specifications Rating Symbol Value Unit CollectorEmitter Voltage VCES 600 Vdc CollectorGate Voltage (RGE = 1.0 MW) VCGR 600 Vdc GateEmitter Voltage - Continuous VGE ±15 Vdc...

MGP2N60D Data Sheet

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Part Number:
MGP2N60D
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCES 600 Vdc
CollectorGate Voltage (RGE = 1.0 MW) VCGR 600 Vdc
GateEmitter Voltage - Continuous VGE ±15 Vdc
Collector Current - Continuous @ TC = 25°C
- Continuous @ TC = 90°C
- Repetitive Pulsed Current (1)		 IC25
IC90
ICM		 1.5
0.9
6.0		 Adc
Apk
Total Power Dissipation @ TC = 25°C
 PD 75 Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg 55 to 150 °C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, RG = 20 W)		 tsc 10 s
Thermal Resistance - Junction to Case IGBT
- Junction to Case Diode
- Junction to Ambient
RqJC
RqJC
RqJA		 1.67
TBD
62.5		 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260 °C



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