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MFG:ON
- Table of contents:
MGP4N60ED
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Suppliers
DataSheet
General Description
MGP4N60ED Maximum Ratings
| Rating | Symbol | Value | Unit |
| CollectorEmitter Voltage | VCES | 600 | Vdc |
| CollectorGate Voltage (RGE = 1.0 MW) | VCGR | 600 | Vdc |
| GateEmitter Voltage - Continuous | VGE | ±20 | Vdc |
| Collector Current - Continuous @ TC = 25°C - Continuous @ TC = 90°C - Repetitive Pulsed Current (1) |
IC25 IC90 ICM |
6.0 4.0 8.0 |
Adc Apk |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD | 62.5 0.51 |
Watts W/°C |
| Operating and Storage Junction Temperature Range | TJ, Tstg | 55 to 150 | °C |
| Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, RG = 20 W) |
tsc | 10 | s |
| Thermal Resistance - Junction to Case IGBT Thermal Resistance - Junction to Ambient |
RqJC RqJA |
2.0 3.6 65 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds | TL | 260 | °C |
| Mounting Torque, 632 or M3 screw | 10 lbfin (1.13 Nm) | ||
MGP4N60ED
PDF/DataSheet Download
- Datasheet: MGP4N60ED
- File Size: 149638 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
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