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MGS05N60D
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DataSheet
General Description
MGS05N60D Maximum Ratings
| Rating | Symbol | Value | Unit |
| CollectorEmitter Voltage | VCES | 600 | Vdc |
| CollectorGate Voltage (RGE = 1.0 MW) | VCGR | 600 | Vdc |
| GateEmitter Voltage - Continuous | VGES | ±15 | Vdc |
| Collector Current - Continuous @ TC = 25°C Collector Current - Continuous @ TC = 90°C Collector Current - Repetitive Pulsed Current (1) |
IC25 IC90 ICM |
0.5 0.3 2.0 |
Adc |
| Total Power Dissipation @ TC = 25°C |
PD | 1.0 | Watt |
| Operating and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C |
| Thermal Resistance - Junction to Case IGBT Thermal Resistance - Junction to Ambient |
RqJC RqJA |
25 125 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds | TL | 260 | °C |
Single Pulse Drain Source Avalanche Energy VDD = 20 V, VGS = 4.5 Vpk, IL = 3.6 Apk, L = 25 mH, RG = 25 |
EAS |
125 40 |
mJ |
MGS05N60D
PDF/DataSheet Download
- Datasheet: MGS05N60D
- File Size: 139157 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
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