Position: Home  > All Categories> Integrated Circuits (ICs) > MGSF1N03LT1

MGSF1N03LT1

MOSFET 30V 2.1A N-Channel

product image

MGSF1N03LT1 Picture
See larger image
SeekIC No. : 00165319 Detail

MGSF1N03LT1: MOSFET 30V 2.1A N-Channel

MGSF1N03LT1 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MGSF1N03LT1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/2

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.1 A
Resistance Drain-Source RDS (on) : 100 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 100 mOhms
Continuous Drain Current : 2.1 A


Specifications

Rating Symbol Value Unit
DraintoSource Voltage VDSS 30 Vdc
GateEmitter Voltage - Continuous VGS ± 20 Vdc
Drain Current - Continuous @ TA = 25°C
Drain Current - Pulsed Drain Current (tp 3 10 ms)		 ID
IDM

750
2000

 A
Total Power Dissipation @ TC = 25°C
 PD 400 mW
Operating and Storage Junction Temperature Range TJ, Tstg 55 to 150 °C

Thermal Resistance - Junction to Ambient
RqJA		 300 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260 °C



Parameters:

Technical/Catalog InformationMGSF1N03LT1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C1.6A
Rds On (Max) @ Id, Vgs100 mOhm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds 140pF @ 5V
Power - Max420mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MGSF1N03LT1
MGSF1N03LT1
MGSF1N03LT1OSCT ND
MGSF1N03LT1OSCTND
MGSF1N03LT1OSCT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Integrated Circuits (ICs)
TA8435H
1MB12-140
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Prototyping Products
AVT4168
DE1
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Resistors
A101G
3006P-1-205LF
LED Products
LM24P20
KCG057QV1DB-G770
View more