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Part Number: MGV12N120D

 

 

 

 

 

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MGV12N120D Maximum Ratings

Rating Symbol Value Unit
CollectorEmitter Voltage VCES 1200 Vdc
CollectorGate Voltage (RGE = 1.0 MW) VCGR 1200 Vdc
GateEmitter Voltage - Continuous VGE ±20 Vdc
Collector Current - Continuous @ TC = 25°C
- Continuous @ TC = 90°C
- Repetitive Pulsed Current (1)
IC25
IC90
ICM
20
12
24
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 123
0.98
Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg 55 to 150 °C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, RG = 20 W)
tsc 10 s
Thermal Resistance - Junction to Case IGBT
Thermal Resistance - Junction to Ambient
RqJC
RqJC
RqJA
1.02
1.41
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260 °C

MGV12N120D datasheet

MGV12N120D
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  • IGBT & DIODE IN D3PAK 12 A @ 90 20 A @ 25 1200 VOLTS 
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