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MGW12N120D

Specifications Rating Symbol Value Unit CollectorEmitter Voltage VCES 1200 Vdc CollectorGate Voltage (RGE = 1.0 MW) VCGR 1200 Vdc GateEmitter Voltage - Continuous VGE ± 20 Vdc Collector Current - Continuous @ TC = 25°C - Continuous @ TC = 90°C- Repetitive Pulsed Curren...

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MGW12N120D: Specifications Rating Symbol Value Unit CollectorEmitter Voltage VCES 1200 Vdc CollectorGate Voltage (RGE = 1.0 MW) VCGR 1200 Vdc GateEmitter Voltage - Continuous VGE ± 20 ...

MGW12N120D Data Sheet

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Part Number:
MGW12N120D
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCES 1200 Vdc
CollectorGate Voltage (RGE = 1.0 MW) VCGR 1200 Vdc
GateEmitter Voltage - Continuous VGE ± 20 Vdc
Collector Current - Continuous @ TC = 25°C
                            - Continuous @ TC = 90°C
                            - Repetitive Pulsed Current (1)		 IC25
IC90
ICM		 20
12
40		 Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C		 PD 125
0.98		 Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg 55 to 150 °C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 W)		 tsc 10 s
Thermal Resistance - Junction to Case IGBT
                               - Junction to Case Diode
                               - Junction to Ambient		 RqJC
RqJC
RqJA		 1.0
1.4
45		 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260

°C

Mounting Torque, 632 or M3 screw 10 lbfin (1.13 Nm)



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