Purchase MGY40N60, In-stock MGY40N60 From SeekIC.
MFG:ON
- Table of contents:
MGY40N60
-
Suppliers
DataSheet
General Description
MGY40N60 Maximum Ratings
| Rating | Symbol | Value | Unit |
| CollectorEmitter Voltage | VCES | 600 | Vdc |
| CollectorGate Voltage (RGE = 1.0 MW) | VCGR | 600 | Vdc |
| GateEmitter Voltage - Continuous | VGE | ±20 | Vdc |
| Collector Current - Continuous @ TC = 25°C - Continuous @ TC = 90°C - Repetitive Pulsed Current (1) |
IC25 IC90 ICM |
66 40 132 |
Adc Apk |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD | 260 2.08 |
Watts W/°C |
| Operating and Storage Junction Temperature Range | TJ, Tstg | 55 to 150 | °C |
| Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, RG = 20 W) |
tsc | 10 | s |
| Thermal Resistance - Junction to Case IGBT Thermal Resistance - Junction to Ambient |
RqJC RqJA |
0.48 35 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds | TL | 260 | °C |
| Mounting Torque, 632 or M3 screw | 10 lbfin (1.13 Nm) | ||
MGY40N60
PDF/DataSheet Download
- Datasheet: MGY40N60
- File Size: 210545 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
- ·MGY20N120D
- MOTOROLA [Motorola, Inc]
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode
- 260884 KB
- ·MGY20N120D/D
- IGBT & DIODE IN TO-264 20 A @ 90 28 A @ 25 1200 VOLTS
- 180346 KB
- ·MGY25N120
- MOTOROLA [Motorola, Inc]
- Insulated Gate Bipolar Transistor
- 234096 KB
- ·MGY25N120/D
- IGBT IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
- 200418 KB
- ·MGY25N120D
- ONSEMI [ON Semiconductor]
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode
- 262454 KB
- ·MGY25N120D/D
- IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
- 223489 KB
- ·MGY30N60D
- MOTOROLA [Motorola, Inc]
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode
- 260690 KB
- ·MGY30N60D/D
- IGBT & DIODE IN TO-264 30 A @ 90 50 A @ 25 600 VOLTS SHORT CIRCUIT RATED
- 221738 KB
MGY40N60 Relative Products
Hotspot Suppliers Product
OS102011MS2QN1
Price: 0.5-1 USD
Miniature Slide Switch, 500V, 20mohm, 0.1A, RoHS compliant, non-shorting contacts
LM111J-8
Price: 3.5-4 USD
voltage comparator, DIP8, 36V
TMS320F2811PBKA
Price: 9-10 USD
digital signal processor, 128-LQFP, 150 MHz, 1.5M total memory, 12-Bit ADC, 32-Bit core
7MBI50N-120
Price: 10-35 USD
IGBT module, 1200V, 50A, 1200V Collector-Emitter Voltage, Including Brake Chopper, Low Saturation ...
IRF630N
Price: 1-2 USD
Power MOSFET, Advanced Process Technology, Dynamic dv/dt Rating, 220V, TO-220
TDA4860
Price: 0.001-5 USD
vertical power amplifier, ZIP, 40 V, ±1.3 A, Powerless vertical shift, Vertical output stage
HD64F2132FA20
Price: 10-100 USD
microcomputer, QFP, -0.3 to +7.0 V, upward-compatible, power-down state
NTGD1100LT1G
Price: 0.1-0.12 USD
SOT163, 8 V, ±3.3 A, load switch, level shift, ±3.3 A load switch, 8.0 V
SMB8J8.0CA-E3
Price: 0.14-0.15 USD
transient voltage suppressor, high power density surface mount, 100 A, 800 W
UC3843BD1013TR
Price: 0.2-0.22 USD
High Current, Controller, 30V
AT89C2051-24SU
Price: 0.45-0.55 USD
20-SOIC, 8-bit microcomputer, 24MHz, 4 V ~ 6 V, ATMEL
IS41C16100S-50K
Price: 1-10 USD
1M x 16 (16-MBIT), dynamic RAM, JEDEC standard pinout, 400mil SOJ, 50mA, 1W
