MH16S64BAMD-6.

Features:

Type name	Max. Frequency	Access Time from CLK [component level]
MH16S64BAMD-6	133MHz	5.4ns (CL = 3)

·Utilizes industry standard 8M X 8 Synchronous DRAMs in TSOP
 package
·Single 3.3V +/- 0.3V supply
·Max.Clock frequency 133MHz
·Fully synchronous operation referenced to clock rising edge
·4-bank operation controlled by BA0,BA1(Bank Address)
·/CAS latency -2/3(programmable,at buffer mode)
·LVTTL Interface
·Burst length 1/2/4/8/Full Page(programmable)
·Burst type- Sequential and interleave burst (programmable)
·Random column access
·Burst Write / Single Write(programmable)
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·4096 refresh cycles every 64ms


Specifications

Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	with respect to Vss	-0.5 ~ 4.6	V
VO	Output Voltage	with respect to Vss	-0.5 ~ 4.6	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25C	16	W
Topr	Operating Temperature		0 ~ 70	C
Tstg	Storage Temperature		-45 ~ 100	C

Description

The MH16S64BAMD is 16777216 - word x 64-bit Synchronous DRAM module. This consist of sixteen industry standard 8M x 8 Synchronous DRAMs in TSOP.

The MH16S64BAMD on a card edge dual in-line package provides any application where high densities and large of quantities memory are required.

MH16S64BAMD is a socket-type memory module ,suitable for easy interchange or addition of module.