MH16S72BAMD-6

Features:

·Utilizes industry standard 8M X 8 Synchronous DRAMs in TSOP package
·Single 3.3V +/- 0.3V supply
·Max.Clock frequency 133MHz
·Fully synchronous operation referenced to clock rising edge
·4-bank operation controlled by BA0,BA1(Bank Address)
·/CAS latency -2/3(programmable,at buffer mode)
·LVTTL Interface
·Burst length 1/2/4/8/Full Page(programmable)
·Burst type- Sequential and interleave burst (programmable)
·Random column access
·Burst Write / Single Write(programmable)
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·4096 refresh cycles every 64ms


Application

Main memory or graphic memory in computer systems


Specifications

Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	with respect to Vss	-0.5 ~ 4.6	V
VO	Output Voltage	with respect to Vss	-0.5 ~ 4.6	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25C	18	W
Topr	Operating Temperature		0 ~ 70	C
Tstg	Storage Temperature		-45 ~ 100	C

Description

The MH16S72BAMD is 16777216 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard 8M x 8 Synchronous DRAMs in TSOP.

The TSOP on a card edge dual in-line package of MH16S72BAMD provides any application where high densities and large of quantities memory are required.

MH16S72BAMD is a socket-type memory module ,suitable for easy interchange or addition of module.