MH2510MOF Features
• BSEN 60065 Approval for MH37 in value range 680K to 3M
• High working voltage to 3.5KV
• Small size
• High pulse load capability
• Robust cement coating
• Value up to 10M
MH2510MOF Typical Application
To ensure reliable performance at high voltages care should be taken to avoid potential sources of ionic contamination contacting the resistor body, for example, flux applied by spraying, encapsulation materials or contaminants from the environment of use.

- ·MH203
- ETC [ETC]
- High Linearity Cellular-Band MMIC Mixer
- 143375 KB

- ·MH203-PCB
- ETC [ETC]
- High Linearity Cellular-Band MMIC Mixer
- 143375 KB

- ·MH2510MOG
- WELWYN [Welwyn Components Limited]
- High Voltage Metal Film Resistors
- 90557 KB

- ·MH28D72KLG-10
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
- 345983 KB

- ·MH28D72KLG-75
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
- 345983 KB

- ·MH28FDD
- MTRONPTI [MTRONPTI]
- 8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator
- 234541 KB

- ·MH28S72PJG-5
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
- 977449 KB

- ·MH28S72PJG-6
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
- 977449 KB

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