MH32D64KQH-10

Features:

- Utilizes industry standard 32M X 8 DDR Synchronous DRAMs in TSOP package , industry standard EEPROM(SPD) in
   TSSOP package
- 200pin SO-DIMM
- Vdd=Vddq=2.5v ±0.2V
- Double data rate architecture; two data transf ers per clock cycle
- Bidirectional, data strobe (DQS) is transmitted/receiv ed with data
- Dif f erential clock inputs (CLK and /CLK)
- DLL aligns DQ and DQS transitions with CLK transition edges of DQS
- Commands entered on each positiv e CLK edge
- Data and data mask ref erenced to both edges of DQS
- 4bank operation concontrolled by BA0,BA1(Bank Address ,discrete)
- /CAS latency - 2.0/2.5 (programmable)
- Burst length- 2/4/8 (programmable)
- Burst Ty pe - sequential/interleav e(programmable)
- Auto precharge / All bank precharge controlled by A10
- 8192 ref resh cycles /64ms
- Auto ref resh and Self ref resh
- Row address A0-12 / Column address A0-9
- SSTL_2 Interf ace
- Module 1bank Conf igration


Application

Main memory unit for Note PC, Mobile etc.


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
Vdd	Supply voltage	With respect to Vss	-0.5 ~ 3.7	V
VI	Input Voltage	With respect to Vss	-0.5 ~ Vdd+0.5	V
VO	Output Voltage	With respect to Vss	-0.5 ~ Vdd+0.5	V
IO	Output current		50	mA
Pd	Power dissipation	Ta=25°C	8	W
Topr	Operating temperature		0~70	°C
Tstg	Storage temperature		-45~100	°C

Description

The MH32D64KQH is 33554432 - word x 64-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

MH32D64KQH consists of 8 industry standard 32M x 8 DDR Sy nchronous DRAMs in TSOP with SSTL_2 interf ace which achiev es v ery high speed data rate up to 133MHz.

MH32D64KQH socket-ty pe memory module is suitable for main memory in computer systems and easy to interchange or add modules.