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Part Number: MH32S72PHB -10

 

 

 

 

Description: BANK ACTIVATEThe SDRAM has four independent banks. Each bank is activated by the ACT command with the bank address(...


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MH32S72PHB -10 General Description


BANK ACTIVATE
The SDRAM has four independent banks. Each bank is activated by the ACT command with the bank address(BA0,1). A row is indicated by the row address A11-0. The minimum activation interval between one bank and the other bank is tRRD.The number of banks which are active concurrently is not limited.

PRECHARGE
The PRE command deactivates indicated by BA. When both banks are active, the precharge all command(PREA,PRE + A10=H) is available to deactivate them at the same time. After tRP from the precharge, an ACT command can be issued.

MH32S72PHB -10 Maximum Ratings

Symbol Parameter Condition Ratings Unit
Vdd Supply Voltage with respect to Vss -0.5 ~ 4.6 V
VI Input Voltage with respect to Vss -0.5 ~ 4.6 V
VO Output Voltage with respect to Vss -0.5 ~ 4.6 V
IO Output Current   50 mA
Pd Power Dissipation Ta=25°C 16 W
Topr Operating Temperature   0 ~ 70 °C
Tstg Storage Temperature   -40 ~ 100 °C

MH32S72PHB -10 Features

·Utilizes industry standard 16M x 8 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
·168-pin (84-pin dual in-line package)
·single 3.3V±0.3V power supply
·Clock frequency 100MHz
·Fully synchronous operation referenced to clock rising edge
·4 bank operation controlled by BA0,1(Bank Address)
·/CAS latency- 2/3(programmable)
·Burst length- 1/2/4/8/Full Page(programmable)
·Burst type- sequential / interleave(programmable)
·Column access - random
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·4096 refresh cycle /64ms
·LVTTL Interface
·Discrete IC and module design conform to PC100 specification.
   (module Spec. Rev. 1.0 and SPD 1.2A(-7,-8), SPD 1.0(-10))

MH32S72PHB -10 Typical Application

PC main memory

MH32S72PHB -10 datasheet

MH32S72PHB -10
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